Gasonics is a Registered Trademark of Novellus Corp.AE 2001 is a single wafer downstream isotropic etch system, designed to etch thin films such as poly silicon, silicon nitride and CVD oxides.Utilizing the proven Aura downstream microwave source and a dedicated reactor chamber, GaSonicsAE2001 offers high etch rates and no RF damage to the wafer. Featuring high reliability and flexibility in process parameter, GaSonics AE 2001 is the unparalleled tool of choice for multiple applications and high capital productivity. Gaonicsa AE2001 is an electro-mechanical production system used to etch materials such as nitride, oxide poly-silicon etc. from the surface of silicon or other substrate. Each wafer is processed individually by means a chemical reaction induced by a gas plasma.
Single Wafer, Multi-Step Processing
Closed-Loop Temperature Control
Accurate, closed-loop pressure control with “butterfly-style” throttle valve and capacitance manometer
RF power: 100 to 500 watts
Timed cycles up to 4 hour each
No RF damage (£0.1 volt CV shift)
Front and backside etching
Excellent etch rates and uniformities
100mm – 150mm wafer capability
Variable platen temperature
Alumina (ceramic) plasma tube
Fluorine compatible chamber
Multiple step process capability
High capital productivity.